IPD50R520CP_08 datasheet(1/10 Pages) INFINEON

Part #	IPD50R520CP

Description	CoolMos Power Transistor

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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1 / 10 page

Type

IPD50R520CP

CoolMOS

TM Power Transistor

Package

• Lowest figure of merit RON x Qg

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Pb-free lead plating; RoHS compliant

• Quailfied according to JEDEC

1) for target applications

CoolMOS CP is designed for:

• Hard- & Softswitching SMPS topologies

• DCM PFC for Lamp ballast

• PWM for Lamp Ballast, PDP and LCD TV

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

2)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=2.5 A, V DD=50 V

166

mJ

Avalanche energy, repetitive t AR

2),3)

E AR

I D=2.5 A, V DD=50 V

Avalanche current, repetitive t AR

2),3)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...400 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

Value

7.1

4.5

15

±30

66

-55 ... 150

0.25

2.5

50

±20

V DS @Tjmax

550

V

R DS(on),max

0.520

Ω

Q g,typ

13

nC

Product Summary

Type

Package

Marking

IPD50R520CP

PG-TO252

5R520P

PG-TO252

Rev. 2.1

page 1

2008-04-10

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IPD50R520CP Datasheet(PDF) 1 Page - Infineon Technologies AG

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