MMSTA13 datasheet(1/2 Pages) ROHM

Part #	MMSTA13

Description	NPN small signal transistor

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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MMSTA13

Transistors

1/1

Each lead has same dimensions

Abbreviated symbol : R1M

MMSTA13

(1)Emitter

(2)Base

(3)Collector

(2)

(1)

0.4

(3)

2.9

1.9

0.95

0.8

0.15

1.1

NPN small signal transistor

MMSTA13

Features

Dimensions (Unit : mm)

1) High Current Gain.

Packaging specifications

Package

Code

Taping

Basic ordering unit (pieces)

MMSTA13

T146

3000

Type

Absolute maximum ratings (Ta=25

°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Parameter

VCBO

VCES

VEBO

PC

Tj

Tstg

30

V

A

°C

30

10

0.3

IC

0.2

W

0.35

W

150

−55 to 125

Symbol

Limits

Unit

∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE

∗

Electrical characteristics (Ta=25

°C)

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cutoff current

Emitter-base cutoff current

Collector-emitter saturation voltage

Base-emitter voltage

DC current transfer ratio

Collector output capacitance

∗

∗ Pulsed

Parameter

Symbol

BVCES

BVCEO

BVEBO

ICEO

hFE

fT

Cob

Min.

30

10

−

5000

125

−

5.4

−

0.1

−

VIC

= 100

µA

IC

= 10

µA

IE

= 10

µA

VEB

= 10V

VCE

= 5V, IC= 10mA

10000

−−

VCE

= 5V, IC= 100mA

VCE

= 5V, IE= −10mA, f=100MHz

VCB

= 10V, f=100kHz, IE= 0

V

ICBO

−−

0.1

VCB

= 30V

µA

VCE(sat)

−

1.5

IC/IB

= 100mA/ 100

µA

V

−

MHz

pF

Typ.

Max.

Unit

Conditions

VBE(on)

−

2.0

VCE

= 5V, IC= 100mA

V

Transition frequency

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