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C232HM Datasheet(PDF) 11 Page - Future Technology Devices International Ltd.

Part # C232HM
Description  USB 2.0 Hi-Speed to MPSSE Cable
PDF  18 Pages
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Manufacturer  FTDI [Future Technology Devices International Ltd.]
Direct Link  http://www.ftdichip.com
Logo FTDI - Future Technology Devices International Ltd.

C232HM Datasheet(HTML) 11 Page - Future Technology Devices International Ltd.

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Copyright © 2011 Future Technology Devices International Limited
10
Document Reference No.: FT_000401
USB 2.0 HI-SPEED TO MPSSE CABLE Datasheet
Version 1.0
Clearance No.: FTDI# 214
3.3.1 C232HM-DDHSL-0 and C232HM-EDHSL-0 I/O Characteristics
Parameter
Description
Minimum
Typical
Maximum
Units
Conditions
Voh
Output Voltage High
2.40
3.14
V
Ioh = +/-2mA
I/O Drive strength* = 4mA
3.20
V
I/O Drive strength* = 8mA
3.22
V
I/O Drive strength* =
12mA
3.22
V
I/O Drive strength* =
16mA
Vol
Output Voltage Low
0.18
0.40
V
Iol = +/-2mA
I/O Drive strength* = 4mA
0.12
V
I/O Drive strength* = 8mA
0.08
V
I/O Drive strength* =
12mA
0.07
V
I/O Drive strength* =
16mA
Vil
Input low Switching
Threshold
-
0.80
V
LVTTL
Vih
Input High Switching
Threshold
2.00
-
V
LVTTL
Vt
Switching Threshold
1.50
V
LVTTL
Vt-
Schmitt trigger negative
going threshold voltage
0.80
1.10
-
V
Vt+
Schmitt trigger positive
going threshold voltage
1.60
2.00
V
Rpu
Input pull-up resistance
40
75
190
KΩ
Vin = 0
Rpd
Input pull-down
resistance
40
75
190
KΩ
Vin =VCCIO
Iin
Input Leakage Current
15
45
85
μA
Vin = 0
Ioz
Tri-state output leakage
current
±10
μA
Vin = 5.5V or 0
Table 3.7 C232HD-DDHSP-0 and C232HD-EDHSP-0 I/O Pin Characteristics
* The I/O drive strength and slow slew-rate are configurable in the EEPROM.
The I/O pins are +3.3v cells, which are +5V tolerant



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