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Data Sheet

RB495D

0

5

10

15

20

25

30

AVE:8.6ns

Ta=25℃

IF=0.5A

IR=1A

Irr=0.25*IR

n=10pcs

FORWARD VOLTAGE：VF(mV)

VF-IF CHARACTERISTICS

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

REVERSE VOLTAGE:VR(V)

VR-Ct CHARACTERISTICS

VF DISPERSION MAP

IR DISPERSION MAP

Ct DISPERSION MAP

IFSM DISRESION MAP

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

TIME:t(ms)

IFSM-t CHARACTERISTICS

TIME:t(s)

Rth-t CHARACTERISTICS

AVERAGE RECTIFIED

FORWARD CURRENT：Io(A)

Io-Pf CHARACTERISTICS

trr DISPERSION MAP

0.001

0.01

0.1

1

0

100

200

300

400

500

600

Ta=-25℃

Ta=125℃

Ta=75℃

Ta=25℃

0.1

1

10

100

1000

10000

100000

0

5

10

15

20

25

30

35

40

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

1

10

100

0

5

10

15

20

25

30

f=1MHz

330

340

350

360

370

380

AVE:359.0mV

Ta=25℃

IF=200mA

n=30pcs

0

20

40

60

80

100

120

140

160

180

200

Ta=25℃

VR=25V

n=30pcs

AVE:33.62uA

50

55

60

65

70

75

80

85

90

95

100

AVE:71.8pF

Ta=25℃

f=1MHz

VR=0V

n=10pcs

0

5

10

15

20

25

30

AVE:12.50A

8.3ms

Ifsm

1cyc

0

5

10

15

20

1

10

100

8.3ms

Ifsm

1cyc

8.3ms

0

5

10

15

20

1

10

100

t

Ifsm

1

10

100

1000

0.001

0.1

10

1000

Rth(j-a)

Rth(j-c)

1ms

IM=1mA

IF=10mA

300us

time

Mounted on epoxy board

0

0.1

0.2

0.3

0

0.1

0.2

0.3

0.4

0.5

Per chip

DC

D=1/2

Sin(θ＝180)

2/3

2011.05 - Rev.B