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MBRF2050 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # MBRF2050
Description  20.0 AMPS. Isolated Schottky Barrier Rectifiers
PDF  2 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBRF2050 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
UL Recognized File # E-326243
Low power loss, high efficiency
High current capability, low forward voltage drop
Guard-ring for overvoltage protection
Mechanical Data
MBRF20XX
= Specific Device Code
G
= Green Compound
Y
= Year
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBRF
2035
MBRF
2045
MBRF
2050
MBRF
2060
MBRF
2090
MBRF
20100
Unit
VRRM
35
45
50
60
90
100
V
VRMS
24
31
35
42
63
70
V
VDC
35
45
50
60
90
100
V
IRRM
A
dV/dt
V/us
Cj
pF
RθjC
OC/W
TJ
OC
TSTG
OC
560
420
10000
5
mA
0.2
0.1
A
0.82
0.72
0.87
0.95
3
Typical Junction Capacitance
A
IFSM
Maximum Instantaneous Forward Voltage (Note 2)
IF=20A, TA=25℃
IF=20A, TA=125℃
VF
Voltage Rate of Change (Rated V R)
V
150
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Weight: 1.88 grams
Typical Thermal Resistance
Type Number
1
A
Green compound with suffix "G" on packing
code & prefix "G" on datecode
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Maximum Reverse Current @ Rated VR T A=25 ℃
T A=125 ℃
Polarity: As marked
Mounting torque: 5 in. - lbs, max
Mounting position:Any
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Repetitive Reverse Surge Current (Note 1)
MBRF2035 - MBRF20100
Marking Diagram
ITO-220AC
20.0 AMPS. Isolated Schottky Barrier Rectifiers
Dimensions in inches and (millimeters)
Case:ITO-220AC molded plastic body
Features
High surge capability
Metal silicon junction, majority carrier conduction
High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
Version:F11
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Note 1: 2.0uS Pulse Width, f=1.0KHz
Operating Temperature Range
Storage Temperature Range
- 65 to + 150
- 65 to + 150
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Average Forward Rectified Current
at Tc=125℃
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125 ℃
IF(AV)
IFRM
20
40
0.5
IR
0.75
15
10
0.65
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE


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