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RB495DRF Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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RB495DRF Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page ![]() RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode Surface device type mounting Mositure sensitivity level 1 Matte tin (Sn) lead finishe with Nickel (Ni) underplate Pb-free version and RoHS compliant Green compound (Halogen free) with suffix "G" on Min Max Min Max packing code and prefix "G" on date code. 2.80 3.00 0.110 0.118 1.20 1.40 0.047 0.055 0.30 0.50 0.012 0.020 Case : SOT- 23 small outline plastic package 1.80 2.00 0.071 0.079 2.25 2.55 0.089 0.100 0.90 1.20 0.035 0.047 0.08 0.19 0.003 0.010 Marking:D3Q Part No. Packing Code Package Packing Marking RB495D RF SOT-23 3K / 7" Reel D3Q RB495D RFG SOT-23 3K / 7" Reel D3Q Note 2: The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. V Junction Temperature TJ ℃ 125 Repetitive Peak Reverse Voltage Reverse Voltage VR 350 Ordering Information High temperature soldering guaranted: 260℃/10s Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guranteed Note 1: Mean output current per element: IO/2. Maximum Ratings Rating at 25°C ambient temperature unless otherwise specified. Mean Forward Current Non-Repetitive Peak Forward Surge Current ( Note 1) V Features Mechanical Data Unit (inch) Dimensions Suggested PAD Layout A 0.022 REF C B D E SOT-23 Epitaxial planar die construction Weight: 0.008 grams (approximate) Unit (mm) 0.550 REF H G F mW Type Number Symbol Units Value Maximum Ratings 1.5 -40 ~+125 IFSM 25 VRRM 40 PD 200 Power dissipation Storage Temperature Range IO TSTG mA A ℃ 2.0 0.079 0.95 0.037 0.9 0.035 0.8 0.031 A B C D F E G H 12 3 Version : E10 |
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