SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

2N2906

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8078

Issue 2

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = -10mA

IB = 0

-40

V(BR)CBO

Collector-Base

Breakdown Voltage

IC = -10µA

IE = 0

-60

V(BR)EBO

Emitter-Base Breakdown

Voltage

IE = -10µA

IC = 0

-5

V

ICEX

Collector Cut-Off Current

VCE = -30V

VBE = -0.5V

-50

VCB = -50V

IE = 0

-20

nA

ICBO

Collector Cut-Off Current

TA = 150°C

-20

µA

IC = -150mA

IB = -15mA

-0.4

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = -500mA

IB = -50mA

-1.6

IC = -150mA

IB = -15mA

-1.3

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = -500mA

IB = -50mA

-2.6

V

IC = -0.1mA

VCE = -10V

20

IC = -1.0mA

VCE = -10V

25

IC = -10mA

VCE = -10V

35

IC = -150mA

VCE = -10V

40

120

hFE

(1)

Forward-current transfer

ratio

IC = -500mA

VCE = -10V

20

DYNAMIC CHARACTERISTICS

IC = -50mA

VCE = -20V

fT

Transition Frequency

f = 100MHz

170

MHz

VCB = -10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

8

VEB = -2V

IC = 0

Cibo

Input Capacitance

f = 1.0MHz

30

pF

IC = -150mA

VCC = -30V

ton

Turn-On Time

IB1 = -15mA

45

IC = -150mA

VCC = -30V

toff

Turn-Off Time

IB1 = - IB2 = -15mA

300

ns

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%