SILICON POWER

NPN TRANSISTOR

2N5663

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8761

Issue 1

Page 2 of 3

** This datasheet supersedes document 5384

Symbols

Parameters

Test Conditions

Min

Typ

Max

Units

VCB = 300V

0.1

µA

ICBO

Collector-Base Cut-Off Current

VCB = 400V

1.0

mA

IB = 0

VCE = 300V

0.2

ICES

Collector-Emitter Cut- off current

TA = 150°C

9

µA

V(BR)CEO

(1)

Collector-Emitter Breakdown Voltage

IC = 10mA

300

V(BR)CER

(1)

Collector-Emitter Breakdown Voltage

IC = 10mA

RBE =100

400

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10µA

6

IC = 1.0A

IB =0.1A

0.4

VCE(sat)

(1)

Collector-Emitter Saturation Voltage

IC = 2A

IB =0.4A

0.8

IC = 1.0A

IB = 0.1A

1.2

VBE(sat)

(1)

Base-Emitter Saturation Voltage

IC = 2A

IB = 0.4A

1.5

V

IC = 50mA

VCE = 2V

25

IC = 0.5A

VCE = 5V

25

75

TA = -55°C

10

IC = 1.0A

VCE = 5V

15

hFE

(1)

DC Current Gain

IC = 2A

VCE = 5V

5

DYNAMIC CHARACTERISTICS

IC = 0.1A

VCE = 5V

| hfe |

Small signal forward-current transfer

ratio

f = 10MHz

1.4

7

VCB = 10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

45

pF

ton

Turn-On Time

IC = 0.5A

VCC = 100V

0.48

toff

Turn-Off Time

IB1 = -IB2 = 25mA

1.5

µs

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%