SILICON EPITAXIAL

NPN TRANSISTOR

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Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

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Document Number 8890

Issue 1

Page 1 of 2

BC378

Driver Stages and Signal Processing Applications

A = 25°C unless otherwise stated)

VCES

30V

VCEO

25V

VEBO

6V

IC

Collector Current

1.0A

IB

Base Current

0.2A

PD

Total Power Dissipation at

TA ≤ 25°C

375mW

TC ≤ 75°C

1.0W

TJ

Junction Temperature Range

175°C

Tstg

Storage Temperature Range

-65 to +175°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJA

Thermal Resistance, Junction To Ambient

400

°C/W

RθJC

Thermal Resistance, Junction To Case

100

°C/W