SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

BDS18

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8667

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = -10mA

IB = 0

-120

V

ICEO

Collector Cut-Off Current

VCE = -60V

IB = 0

-0.1

mA

ICBO

Collector Cut-Off Current

VCB = -120V

IE = 0

-20

IEBO

Emitter Cut-Off Current

VEB = -5V

IC = 0

-10

µA

IC = -0.5A

VCE = -2V

40

250

hFE

(1)

Forward-current transfer

ratio

IC = -4A

VCE = -2V

15

150

IC = -0.5A

IB = -0.05A

-0.4

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = -4A

IB = -0.4A

-1.5

VBE(on)

(1)

Base-Emitter Voltage

IC = -1.0A

VCE = -2V

-1.4

V

DYNAMIC CHARACTERISTICS

IC = -0.5A

VCE = -4V

fT

Transition Frequency

f = 5MHz

10

MHz

IC = -2A

VCC = -80V

ton

Turn-On Time

IB1 = -0.2A

0.5

ts

Storage Time

IC = -2A

VCC = -80V

1.5

tf

Fall Time

IB1 = - IB2 = -0.2A

0.3

µs

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%