SILICON MULTI-EPITAXIAL

NPN TRANSISTOR

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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 6522

Issue 2

Page 1 of 3

BUR50

•

High Pulse Power, Fast Switching.

•

Hermetic Metal TO3 Package.

•

Ideally suited for Motor Control

and Power Switching Circuits

•

Screening Options Available

C = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

200V

VCEO

Collector – Emitter Voltage

125V

VEBO

Emitter – Base Voltage

10V

IC

Continuous Collector Current

70A

ICM

Peak Collector Current

tp = 10ms

100A

IB

Base Current

20A

PD

Total Power Dissipation at

TC = 25°C

350W

Derate Above 25°C

2W/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

0.5

°C/W