SILICON MULTI-EPITAXIAL

NPN TRANSISTOR

BUX11

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8171

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

ICEO

Collector Cut-Off Current

VCE = 160V

IB = 0

1.5

VCE = 250V

VBE = -1.5V

1.5

ICEX

Collector Cut-Off Current

TC = 125°C

6

IEBO

Emitter Cut-Off Current

VEB = 5V

IC = 0

1.0

mA

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 10mA

200

V(BR)EBO

Emitter-Base Breakdown

Voltage

IE = 1.0mA

7

IC = 6A

IB = 0.6A

0.6

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 12A

IB = 1.5A

1.5

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 12A

IB = 1.5A

1.5

V

IC = 6A

VCE = 2V

20

60

hFE

(1)

Forward-current transfer

ratio

IC = 12A

VCE = 4V

10

DYNAMIC CHARACTERISTICS

IC = 1.0A

VCE = 15V

fT

Transition Frequency

f = 10MHz

8

MHz

IC = 12A

VCC = 150V

ton

Turn-On Time

IB1 = 1.5A

1.0

ts

Storage Time

IC = 12A

VCC = 150V

1.8

tf

Fall Time

IB1 = -IB2 = 1.5A

0.4

µ

s

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%