SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

BUX77

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 5514

Issue 3

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 50mA

IB = 0

80

V(BR)CES

Collector-Emitter

Breakdown Voltage

IC = 2mA

VBE = 0

100

V(BR)EBO

Emitter-Base Breakdown

Voltage

IE = 1.0mA

IC = 0

6

V

ICEO

Collector Cut-Off Current

VCE = 60V

IB = 0

10

VCB = 80V

IE = 0

0.5

ICBO

Collector Cut-Off Current

TC = 150°C

150

IEBO

Emitter Cut-Off Current

VEB = 4V

IC = 0

0.5

µA

IC = 0.5A

VCE = 5V

50

IC = 2A

VCE = 5V

50

120

IC = 5A

VCE = 5V

30

IC = 1.0A

VCE = 5V

hFE

(1)

Forward-current transfer

ratio

TC = -40°C

25

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 5A

IB = 0.5A

1.0

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 5A

IB = 0.5A

1.3

V

DYNAMIC CHARACTERISTICS

IC = 0.5A

VCE = 5V

|hfe|

Small signal forward-current

transfer ratio

f = 20MHz

1.5

IC = 5A

VCC = 40V

ton

Turn-On Time

IB1 = 0.5A

0.3

0.4

IC = 5A

VCC = 40V

toff

Turn-Off Time

IB1 = - IB2 = 0.5A

1.1

2.5

µs

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%