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BUY82X Datasheet(PDF) 2 Page - Seme LAB

Part # BUY82X
Description  NPN SILICON PLANER EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE
PDF  2 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BUY82X Datasheet(HTML) 2 Page - Seme LAB

  BUY82X Datasheet HTML 1Page - Seme LAB BUY82X Datasheet HTML 2Page - Seme LAB  
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BUY82X
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7363, ISSUE 2
ELECTRICAL CHARACTERISTICS (T
case=25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max.
Unit
IC = 1.5A
40
hFE*
Forward-current transfer ratio
IC = 10A
VCE = 5.0V
15
IC = 10A
IB = 1A
1.0
VCE(sat)*
Collector to Emitter Saturation
Voltage
IC = 1.5A
IB = 150mA
0.8
IC = 10A
IB = 1A
1.8
VBE(sat)*
Base to Emitter Saturated Voltage
IC = 1.5A
IB = 150mA
1.2
V
IE = 0
VCB = 100V
10
ICBO
Collector to Base Cut-Off Current
TCase = 150°C
500
IEBO
Emitter to Base Cut-Off Current
IC = 0
VEB = 5V
10
µ
A
DYNAMIC CHARACTERISTICS
Ton
Turn-on time
VCC=30V, IC=5.0A, IB=0.5A
1.5
Toff
Turn-off time
VCC=30V, IC=5.0A, IB1=-IB2=0.5A
1.5
µ
s
IE = 0
VCB = 10V
Cob
Output Capacitance
f = 1.0MHz
200
IC = 0
VEB = 0.5V
Cib
Input Capacitance
f = 1.0MHz
1200
pF
IC = 100mA
VCE = 10V
FT
Transition Frequency
f = 20MHz
20
MHz
* Pulse test tp = 300µs, δ < 2%
THERMAL CHARACTERISTICS
Max.
Unit
Rth j-case
Thermal resistance to case
5.0
°C/W
Rth j-amb
Thermal resistance junction to ambient
150
°C/W



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