P-CHANNEL

POWER MOSFET

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Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

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Document Number 3098

Issue 2

Page 1 of 3

IRFF9130 / 2N6849

Motor Control and Amplifier Applications

C = 25°C unless otherwise stated)

VDS

Drain – Source Voltage

-100V

VDG

Drain – Gate Voltage

RGS = 20K

-100V

VGS

Gate – Source Voltage

±20V

ID

Continuous Drain Current

Tc = 25°C

-6.5A

ID

Continuous Drain Current

Tc = 100°C

-4.1A

IDM

Pulsed Drain Current

(1)

-25A

PD

Total Power Dissipation at

Tc = 25°C

25W

Derate Above 25°C

0.2W/°C

EAS

Single Pulse Avalanche Energy

(2)(4)

500mJ

TJ

Junction Temperature Range

-55 to +150°C

Tstg

Storage Temperature Range

-55 to +150°C

THERMAL PROPERTIES

Symbols

Parameters

Max.

Units

RθJC

Thermal Resistance, Junction To Case

5

°C/W

RθJA

Thermal Resistance, Junction To Ambient

175

°C/W

INTERNAL PACKAGE INDUCTANCE

Symbols

Parameters

Typ.

Units

LS + LD

Total Inductance

7

nH

Notes

Notes

Notes

Notes

(1)

Repetitive Rating: Pulse width limited by maximum junction temperature

(2)

@VDD = -25V, Starting TJ = 25°C, L = 17.25mH, Peak IL = -6.5A, VGS = -10V

(3)

Pulse Width ≤ 300us, δ ≤ 2%

(4)

By Design Only, Not A Production Test.