HIGH POWER NPN SILICON

TRANSISTOR

STP5508

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8758

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 10mA

120

V

ICEO

Collector Cut-Off Current

VCE = 60V

IB = 0

50

VCE = 140V

VBE(off) = 1.5V

10

µA

ICEX

Collector Cut-Off Current

TC = 150 °C

1.0

mA

IEBO

Emitter Cut-Off Current

VEB = 6V

IC = 0

100

µA

IC = 20A

IB = 2.0A

1.0

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 50A

IB = 10A

3

IC = 20A

IB = 2.0A

1.8

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 50A

IB = 10A

3.5

VBE(on)

(1)

Base-Emitter On Voltage

IC = 20A

VCE = 4V

1.8

V

IC = 1.0A

VCE = 4V

50

IC = 20A

VCE = 4V

50

120

hFE

(1)

Forward-current transfer

ratio

IC = 50A

VCE = 4V

10

-

DYNAMIC CHARACTERISTICS

hfe

Magnitude of common

emitter small-signal short-

circuit forward current

transfer ratio

IC = 1.0A

f = 10MHz

VCE = 10V

1

-

VCB = 10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

600

pF

tr

Rise Time

0.35

ts

Storage Time

1.1

µS

tf

Fall Time

VCC = 80V

IC = 20A

IB1 = IB2 = 2A

0.25

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%