ZTX653DCSM datasheet(2/3 Pages) SEME-LAB

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ZTX653DCSM

ZTX753DCSM

Document Number 2836

Issue 1

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Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

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Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IC = 100µA

IC = 10mA

IE = 100µA

VCB = 100V

TC = 100°C

VEB = 4V

IC = 500mA

IB = 50mA*

IC = 1A

IB = 100mA*

IC = 2A

IB = 200mA*

IC = 1A

IB = 100mA*

IC = 1A

VCE = 2V*

IC = 50mA

VCE = 2V*

IC = 500mA

VCE = 2V*

IC = 1A

VCE = 2V*

IC = 2A

VCE = 2V*

ZTX653 ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise stated)

V(BR)CBO

Collector – Base Breakdown Voltage

V(BR)CEO

Collector – Emitter Breakdown Voltage

V(BR)EBO

Emitter – Base Breakdown Voltage

ICBO

Collector – Cut-off Current

IEBO

Emitter Cut-off Current

VCE(sat)

Collector – Emitter Saturation Voltage

VBE(sat)

Base – Emitter Saturation Voltage

VBE(on)

Base – Emitter Turn-On Voltage

HFE

DC Current Gain

120

100

0.1

0.2

0.3

0.35

0.5

0.8

1.0

1.3

0.95

1.2

200

100

200

300

110

µA

—

Transition Frequency

Cobo

Output Capacitance

Ton

Switching Times

Toff

Switching Times

IC = 100mA

VCE = 5V

f = 100MHz

VCB = 10V

f = 1.0MHz

IC = 500mA VCC = 10V

IB1=IB2=50mA

140

175

1200

MHz

DYNAMIC CHARACTERISTICS (T

A = 25°C unless otherwise stated)

* Pulse test tp = 300ms , δ ≤ 2%

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