L6470 datasheet(12/70 Pages) STMICROELECTRONICS

12 / 70 page

Electrical characteristics

L6470

12/70

Doc ID16737 Rev 4

Fall time (3)

POW_SR = '00'; Iout = +1 A

POW_SR = '00'; Iout = -1 A

110

POW_SR = '11', Iout = ±1 A

110

POW_SR = '10', Iout = ±1 A

260

POW_SR = '01', Iload= ±1 A

375

SRout_r

Output rising slew rate

POW_SR = '00', Iout = +1 A

285

V/µs

POW_SR = '00', Iout = -1 A

360

POW_SR = '11', Iout = ±1 A

285

POW_SR = '10', Iout = ±1 A

150

POW_SR = '01', Iout = ±1 A

SRout_f

Output falling slew rate

POW_SR = '00', Iout = +1 A

320

V/µs

POW_SR = '00', Iout = -1 A

260

POW_SR = '11', Iout = ±1 A

260

POW_SR = '10', Iout = ±1 A

110

POW_SR = '01', Iout = ±1 A

Deadtime and blanking

tDT

Deadtime (1)

POW_SR = '00'

250

POW_SR = '11',

fOSC = 16 MHz

375

POW_SR = '10',

fOSC = 16 MHz

625

POW_SR = '01',

fOSC = 16 MHz

875

tblank

Blanking time (1)

POW_SR = '00'

250

POW_SR = '11',

fOSC = 16 MHz

375

POW_SR = '10',

fOSC = 16 MHz

625

POW_SR = '01',

fOSC = 16 MHz

875

Source-drain diodes

VSD,HS

High-side diode forward ON voltage

Iout = 1 A

1.1

VSD,LS

Low-side diode forward ON voltage

Iout = 1 A

1.1

trrHS

High-side diode reverse recovery time

Iout = 1 A

trrLS

Low-side diode reverse recovery time

Iout = 1 A

100

Table 5.

Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min. Typ.

Max. Unit

L6470 Datasheet(PDF) 12 Page - STMicroelectronics

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