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STL85N6F3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL85N6F3 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() July 2011 Doc ID 15340 Rev 2 1/15 15 STL85N6F3 N-channel 60 V, 0.0057 Ω, 19 A PowerFLAT™ 5x6 STripFET™ Power MOSFET Features ■ Extremely low on-resistance RDS(on) ■ 100% avalanche tested Applications ■ Switching applications Description This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STL85N6F3 60 V < 0.0065 Ω 19 A (1) 1. The value is rated according Rthj-pcb PowerFLAT™ 5x6 1 2 3 4 Table 1. Device summary Order code Marking Package Packaging STL85N6F3 85N6F3 PowerFLAT™ 5x6 Tape and reel www.st.com |
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