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DS1314 Datasheet(PDF) 11 Page - Dallas Semiconductor |
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DS1314 Datasheet(HTML) 11 Page - Dallas Semiconductor |
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11 / 11 page ![]() DS1314 11 of 11 DATA SHEET REVISION SUMMARY The following represent the key differences between 12/16/96 and 06/12/97 version of the DS1314 data sheet. Please review this summary carefully. 1. Changed VBAT max to 6V. 2. Changed VCCTP values to 2.8 - 3.0V (TOL = GND) and 2.5 - 2.7V (TOL = VCC). 3. Changed tBABW from 7s to 1s max. 4. Changed block diagram to show U L compliance. The following represent the key differences between 06/12/97 and 08/29/97 version of the DS1314 data sheet. Please review this summary carefully. 1. Changed AC test conditions. 2. Changed tPD to 20 max & 12 typ. The following represent the key differences between 08/29/97 and 12/16/97 version of the DS1314 data sheet. Please review this summary carefully. 1. Changed VCCI mins from 3.05V to 3.0V (TOL=GND) and from 275V to 2.7V (TOL=VCCD) (this should have been done on 06/12/97 revision but was overlooked). 2. Specified Input Capacitance as being only for CEI , TOL and Output Capacitance as being only for CEO , BW and RST . This is not a change but rather clarification. 3. Removed “preliminary” from title bar. |
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