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PT4810 Datasheet(PDF) 2 Page - Sharp Corporation

Part # PT4810
Description  Thin Type Phototransistor
PDF  6 Pages
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Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation

PT4810 Datasheet(HTML) 2 Page - Sharp Corporation

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PT4800/PT4800F/PT4810/PT4810F/PT4850F
s Electro-optical Characteristics
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
*2Collector current
PT4800
IC
Ee = 1mW/cm2
VCE =5V
0.12
0.4
1.0
mA
PT4800F
0.08
0.25
0.75
mA
PT4850F
0.12
-
0.56
mA
PT4810
Ee = 0.1mW/cm2
0.45
-
7.0
mA
PT4810F
0.27
-
6.0
mA
VCE =2V
Collector dark current
PT4800/PT4800F
ICEO
Ee = 0, VCE = 20V
-
-
0.1
m A
PT4850F
PT4810/PT4810F
Ee = 0, VCE = 10V
-
-
1.0
m A
voltage
PT4800/PT4800F
V CE
(sat)
Ee = 10mW/cm2
-
-
0.4
V
PT4850F
IC = 0.5mA
PT4810/PT4810F
Ee = 1mW/cm2
-
-
1.0
V
IC = 2.5mA
Collector-emitter breakdown voltage
BV CEO
IC = 0.1mA
35
-
-
V
Ee =0
Emitter-collector breakdown voltage
BV ECO
IE = 0.01mA
6-
-
V
Ee =0
Peak sensitivity
wavelength
PT4800
λ p
-
800
-
nm
PT4800F
-
860
-
nm
PT4850F
-
-
860
-
nm
PT4810
-
800
-
nm
PT4810F
-
860
-
nm
t r
VCE = 2V, I C = 2mA
-
3.0
-
µ s
RL = 100
Ω
VCE =2V
IC = 10mA
RL = 100
Ω
-
80
400
µs
tf
V CE = 2V, I C = 2mA
-
3.5
-
µs
RL = 100
Ω
V CE =2V
IC = 10mA
RL = 100
Ω
-
70
350
µs
Half intensity angle
∆θ
-
-
±35
-
PT4800/PT4800F
PT4850F
PT4810/PT4810F
PT4800/PT4800F
PT4850F
PT4810/PT4810F
*2Collector-emitter saturation
( Ta = 25˚C)
- 25
0
25
50
75
100
0
20
40
60
80
100
85
0
25
50
75
100
2
5
2
5
2
5
2
5
Ambient temperature T a (˚C)
Ambient temperature T a (˚C)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
(PT4800/PT4800F/PT4850F )
Response
time
Rise time
Fall time
Fig. 2-a Collector Dark Current vs.
Ambient Temperature
VCE = 20V
10 -6
10 -7
10 -8
10 -9
10 -10
˚



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