MMBT5401 datasheet(2/2 Pages) DIOTEC

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MMBT5401

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 120 V, (E open)

MMBT5401

- ICBO

–

50 nA

- VCB = 120 V, Tj = 100°C, (E open)

MMBT5401

- ICBO

–

50 µA

Emitter-Base-cutoff current – Emitter-Basis-Reststrom

- VEB = 4 V, (C open)

- IEBO

–

–-

50 nA

Gain-Bandwidth Product – Transitfrequenz

- IC = 10 mA, - VCE = 10 V, f = 100 MHz

100 MHz

–

300 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

–

6 pF

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 200 µA,

RS = 10 Ω, f = 1 kHz

MMBT5401

–

8 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

MMBT5551

Marking - Stempelung

MMBT5401 = 2Lx

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

[%]

tot

120

100

[°C]

150

100

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

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