MMFTN123 datasheet(2/2 Pages) DIOTEC

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MMFTN123

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung

ID = 250 µA

V(BR)DSS

100 V

Drain-Source leakage current – Drain-Source-Leckstrom

VDS = 100 V

VDS = 20 V

IDSS

1 µA

10 nA

Gate-Source leakage current – Gate-Source-Leckstrom

VGS = ± 20 V

IGSS

± 50 nA

Gate-Source threshold voltage – Gate-Source Schwellspannung

VGS = VDS, ID = 1 mA

VGS(th)

0.8 V

2 V

Drain-Source on-state resistance – Drain-Source Einschaltwiderstand

VGS = 10 V, ID = 170 mA

VGS = 4.5 V, ID = 170 mA

RDS(on)

6 Ω

10 Ω

Input Capacitance – Eingangskapazität

VDS = 25 V, f = 1 MHz

Ciss

73 pF

Output Capacitance – Ausgangskapazität

VDS = 10 V, f = 1 MHz

Coss

7 pF

Reverse Transfer Capacitance – Rückwirkungskapazität

VDS = 10 V, f = 1 MHz

Crss

3.4 pF

Turn-On Delay Time – Einschaltverzögerung

VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω

td(on)

3.4 ns

Turn-On Rise Time – Anstiegszeit

VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω

18 ns

Turn-Off Delay Time – Ausschaltverzögerung

VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω

td(off)

31 ns

Turn-Off Fall Time – Abfallzeit

VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω

5 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 500 K/W 1)

Device mounted on standard PCB material

Bauteil montiert auf Standard-Leiterplattenmaterial

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