MMFTN170 datasheet(2/2 Pages) DIOTEC

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MMFTN170

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung

ID = 100 µA

V(BR)DSS

60 V

Drain-Source leakage current – Drain-Source Leckstrom

G short

VDS = 25 V

IDSS

0.5 µA

Gate-Body leakage current – Gate-Substrat Leckstrom

VGS = 15 V

IGSS

10 nA

Gate-Source threshold voltage – Gate-Source Schwellspannung

VGS = VDS, ID = 1 mA

VGS(th)

0.8 V

3 V

Drain-Source on-state resistance – Drain-Source Einschaltwiderstand

VGS = 10 V, ID = 200 mA

RDS(on)

5 Ω

Forward Transconductance – Übertragungssteilheit

VDS > 2 VDS(on), ID = 200 mA

gFS

320 mS

Input Capacitance – Eingangskapazität

VDS = 10 V, f = 1 MHz

Ciss

40 pF

Output Capacitance – Ausgangskapazität

VDS = 10 V, f = 1 MHz

Coss

30 pF

Reverse Transfer Capacitance – Rückwirkungskapazität

VDS = 10 V, f = 1 MHz

Crss

10 pF

Turn-On Time – Einschaltzeit

VDD = 25 V, ID = 500 mA, VGS = 10 V, RG = 50 Ω

td(on)

10 ns

Turn-Off Delay Time – Ausschaltverzögerung

VDD = 25 V, ID = 500 mA, VGS = 10 V, RG = 50 Ω

td(off)

10 ns

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