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SBT1845 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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SBT1845 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() SBT1820 … SBT1845 SBT1820 … SBT1845 Schottky Barrier Rectifiers – Single Diode Schottky-Barrier-Gleichrichter – Einzeldiode Version 2011-06-27 Dimensions - Maße [mm] Nominal current – Nennstrom 18 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20...45 V Plastic case – Kunststoffgehäuse TO-220AC Weight approx. – Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Green Molding Halogen-Free1 Typical Applications Typische Anwendungen Bypass Diodes – best trade-off between VF and IR 2) Free-Wheeling Diodes High Frequent Output Rectification Bypass-Dioden – optimales VF und IR 2) Freilaufdioden Hochfrequenz-Ausgangsgleichrichtung Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive / Surge peak reverse voltage Periodische- / Spitzen-Sperrspannung VRRM [V] / VRSM [V] Forward Voltage Durchlass-Spannung VF [V] Tj = 125°C Forward voltage Durchlass-Spannung VF [V] Tj = 25°C IF = 5 A IF = 5 A IF = 18 A SBT1820 20 typ. 0.33 < 0.50 < 0.58 SBT1830 30 typ. 0.33 < 0.50 < 0.58 SBT1840 40 typ. 0.33 < 0.50 < 0.58 SBT1845 45 typ. 0.33 < 0.50 < 0.58 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 18 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 55 A 3) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SBT1820... SBT1845 TA = 25°C IFSM 280/320 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 390 A2s Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj Tj -50...+150°C ≤ 200°C 1 From 4Q/2011 – Ab 4Q/2011 2 For more details, ask for the Diotec Application Note “Reliability of Bypass Diodes” Weitere Infos in der Diotec Applikationsschrift „Reliability of Bypass Diodes” 3 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 10±0.2 1.5 0.9 5.08 3.8 Type Typ 1 2 3 4 1 2 3 4 |
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