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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

MMIC VCO w/ BUFFER

AMPLIFIER, 2.75 - 3.0 GHz

v02.0805

General Description

Features

Functional Diagram

The HMC416LP4 & HMC416LP4E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC VCOs

with

integrated

resonators,

negative

resistance

devices,

varactor

diodes,

and

buffer

amplifiers.

Covering 2.75 to 3.0 GHz, the VCO’s phase noise

performance is excellent over temperature, shock,

vibration and process due to the oscillator’s monolithic

structure.

Power output is 4.5 dBm typical from a

single supply of 3V @ 37 mA. The voltage controlled

oscillator is packaged in a low cost leadless QFN 4 x 4

mm surface mount package.

Pout: +4.5 dBm

Phase Noise: -114 dBc/Hz @100 k Hz

No External Resonator Needed

Single Supply: 3V @ 37 mA

Typical Applications

Low noise MMIC VCO w/Buffer Amplifier for:

• Wireless Infrastructure

• Industrial Controls

• Test Equipment

• Military

Parameter

Min.

Typ.

Max.

Units

Frequency Range

2.75 - 3.0

GHz

Power Output

1.5

4.5

dBm

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

-114

dBc/Hz

Tune Voltage (Vtune)

0

10

V

Supply Current (Icc) (Vcc = +3.0V)

37

mA

Tune Port Leakage Current

10

μA

Output Return Loss

9dB

Harmonics

2nd

3rd

-5

-16

dBc

dBc

Pulling (into a 2.0:1 VSWR)

3MHz pp

Pushing @ Vtune= +5V

-1

MHz/V

Frequency Drift Rate

0.3

MHz/°C