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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

General Description

Features

Functional Diagram

The HMC430LP4 & HMC430LP4E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC VCOs

with

integrated

resonators,

negative

resistance

devices, varactor diodes, and buffer amplifiers. The

VCO’s phase noise performance is excellent over

temperature, shock, vibration and process due to the

oscillator’s monolithic structure.

Power output is 2

dBm typical from a 3V supply voltage. The voltage

controlled oscillator is packaged in a low cost leadless

QFN 4 x 4 mm surface mount package.

Pout: +2 dBm

Phase Noise: -103 dBc/Hz @100 kHz

No External Resonator Needed

Single Supply: 3V @ 27 mA

Typical Applications

Low noise MMIC VCO w/Buffer Amplifier

for C-Band applications such as:

• 802.11a & HiperLAN WLAN

• VSAT Radios

• UNII & Point-to-Point Radios

Parameter

Min.

Typ.

Max.

Units

Frequency Range

5.0 - 5.5

GHz

Power Output

-1

2

dBm

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

-103

dBc/Hz

Tune Voltage (Vtune)

0

10

V

Supply Current (Icc) (Vcc= +3.0V)

27

mA

Tune Port Leakage Current

10

μA

Output Return Loss

6dB

Harmonics

2nd

3rd

-15

-25

dBc

dBc

Pulling (into a 2.0:1 VSWR)

12

MHz pp

Pushing @ Vtune= +5V

12

MHz/V

Frequency Drift Rate

0.8

MHz/°C

MMIC VCO w/ BUFFER

AMPLIFIER, 5.0 - 5.5 GHz

v06.1106