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2SC4585 Datasheet(PDF) 1 Page - Shindengen Electric Mfg.Co.Ltd |
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2SC4585 Datasheet(HTML) 1 Page - Shindengen Electric Mfg.Co.Ltd |
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1 / 10 page  Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd RATINGS SHINDENGEN OUTLINE DIMENSIONS Unit : mm Case : ITO-3P HFX Series Switching Power Transistor 10A NPN 2SC4585 (TP10W80HFX) ●Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55～150 ℃ Junction Temperature Tj 150 ℃ Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 10A Collector Current Peak ICP 20 Base Current DC IB 4 A Base Current Peak IBP 8 Total Transistor Dissipation PT Tc = 25℃ 85 W Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque : 0.5N･m) 0.8 N･m ●Electrical Characteristics (Tc=25℃) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.2A Min 800 V Collector Cutoff Current ICBO At rated Voltage Max 0.1 mA ICEO Max 0.1 Emitter Cutoff Current IEBO At rated Voltage Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 5A Min 8 hFEL VCE = 5V, IC = 1mA Min 7 Collector to Emitter Saturation Voltage VCE(sat) IC = 5A Max 1.0 V Base to Emitter Saturation Voltage VBE(sat) IB = 1A Max 1.5 V Thermal Resistance θjc Junction to case Max 1.47 ℃/W Transition Frequency fT VCE = 10V, IC = 1A TYP 8 MHz Turn on Time ton IC = 5A Max 0.5 Storage Time ts IB1 = 1A, IB2 = 2A Max 3.5 μs Fall Time tf RL = 50Ω, VBB2 = 4V Max 0.3 |
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