| Electronic Components Datasheet Search |
|
HMC496LP3 Datasheet(PDF) 7 Page - Hittite Microwave Corporation |
|
|
|||||||||||||||||||||||||||||
HMC496LP3 Datasheet(HTML) 7 Page - Hittite Microwave Corporation |
|
7 / 10 page ![]() For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 11 11 - 7 Pin Number Function description interface schematic 1, 4, 9, 12 GNd these pins and the ground paddle must be connected to a high quality rF/dc ground. 2, 3 loP, loN differential lo input ports. this device may be driven in either differential or single ended mode. in single ended mode, one port should be driven by the lo source while the other port may be terminated with a 50Ω resistor to ground. 5, 8, 13 N/c No connection required. these pins may be connected to rF/ dc ground without affecting performance. 6, 7 qN, qP differential quadrature baseband input. these are high impedance ports. the nominal recommended bias voltage is between 1.2 - 1.4V. the nominal recommended baseband input voltage is 1.2V peak to peak differential. By adjusting the dc bias voltage on ports qN & qP, the carrier suppression of the device can be optimized for a specific frequency band and lo power level. the typical offset voltage for optimization is less than 15 mV. the amplitude and phase difference between the i and q inputs can be adjusted in order to optimize the sideband suppression for a specific frequency band and lo power level. 10, 11 rFN, rFP rF output port. this port is matched to 50 ohms. a series capacitor should be connected to this port in order to prevent the dc supply voltage from appearing on the customer’s Pc board. 14, 15 iP, iN differential quadrature baseband input. these are high impedance ports. the nominal recommended bias voltage is between 1.2 - 1.4V. the nominal recommended baseband input voltage is 1.2V peak to peak differential. By adjusting the dc bias voltage on ports iN & iP, the carrier suppression of the device can be optimized for a specific frequency band and lo power level. the typical offset voltage for optimization is less than 15 mV. the amplitude and phase difference between the i and q inputs can be adjusted in order to optimize the sideband suppression for a specific frequency band and lo power level. 16 Vcc supply voltage. set to 3.0V for nominal operation. the nominal current for this port is 93 ma. Pin Descriptions SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz v05.0811 HMC496LP3 / 496LP3E |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |