For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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12 - 146

General Description

Features

Functional Diagram

The HMC532LP4 & HMC532LP4E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC VCOs

with

integrated

resonators,

negative

resistance

devices,

varactor

diodes,

and

buffer

amplifiers.

Covering 7.1 to 7.9 GHz, the VCO’s phase noise

performance is excellent over temperature, shock

and vibration due to the oscillator’s monolithic struc-

ture. Power output is +14 dBm typical from a single

supply of +3V @ 85 mA. The voltage controlled

oscillator is packaged in a leadless QFN 4 x 4 mm

surface mount package.

Pout: +14 dBm

Phase Noise: -103 dBc/Hz @100 KHz

No External Resonator Needed

Single Supply: +3V @ 85 mA

Typical Applications

Low noise MMIC VCO w/Buffer Amplifier for:

• VSAT Radio

• Point to Point/Multipoint Radio

• Test Equipment & Industrial Controls

• Military End-Use

Parameter

Min.

Typ.

Max.

Units

Frequency Range

7.1 - 7.9

GHz

Power Output

12

14

17

dBm

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

-101

dBc/Hz

Tune Voltage (Vtune)

1

13

V

Supply Current (Icc) (Vcc = +3V)

60

85

100

mA

Tune Port Leakage Current

10

μA

Output Return Loss

15

dB

Harmonics

2nd

3rd

-14

-25

dBc

dBc

Pulling (into a 2.0:1 VSWR)

28

MHz pp

Pushing @ Vtune= +5V

78

MHz/V

Frequency Drift Rate

0.85

MHz/°C

MMIC VCO w/ BUFFER

AMPLIFIER, 7.1 - 7.9 GHz

v01.0508