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BCP020T Datasheet(PDF) 1 Page - BeRex Corporation |
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BCP020T Datasheet(HTML) 1 Page - BeRex Corporation |
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1 / 5 page  www.berex.com BeRex, Inc. 1735 North 1 st Street #302 San Jose, CA 95112 tel. (408) 452-5595 September 2011 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 200µm) The BeRex BCP020T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 200 micron gate width making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP020T is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. PRODUCT FEATURES 24 dBm Typical Output Power 14 dB Typical Gain @ 12 GHz 0.25 X 200 Micron Recessed Gate APPLICATIONS Commercial Military / Hi-Rel. Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS TEST FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 22.5 24.0 24.0 dBm G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 12.0 14.0 12.0 dB PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 60 55 % NF 50 Ohm Noise Figure (Vds=2V, Ids=10 mA 12 GHz 1.09 dB Idss Saturated Drain Current (Vgs = 0V, Vds = 3V) 40 60 80 mA Gm Transconductance (Vds = 3V, Vgs = 50% Idss) 80.0 mS Vp Pinch-off Voltage (Ids = 0.3 mA, Vds = 3V) -2.5 -1.1 -0.5 V BVgd Drain Breakdown Voltage (Ig = 0.6 mA, source open) -15 -12 V BVgs Source Breakdown Voltage (Ig = 0.6 mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 160 ° C/W BCP020T |
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