FS2ASJ-3 datasheet(2/4 Pages) MITSUBISHI

2 / 4 page

Feb.1999

V (BR) DSS

IGSS

IDSS

VGS (th)

rDS (ON)

VDS (ON)

yfs

Ciss

Coss

Crss

td (on)

td (off)

VSD

Rth (ch-c)

trr

MITSUBISHI Nch POWER MOSFET

FS2ASJ-3

HIGH-SPEED SWITCHING USE

µA

Ω

°C/W

150

—

1.0

—

1.5

0.58

0.61

0.58

4.5

360

1.0

—

±0.1

0.1

2.0

0.75

0.81

0.75

—

1.5

6.25

—

ELECTRICAL CHARACTERISTICS (Tch = 25

°C)

Drain-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Reverse recovery time

Symbol

Unit

Parameter

Test conditions

Limits

Min.

Typ.

Max.

ID = 1mA, VGS = 0V

VGS =

±20V, VDS = 0V

VDS = 150V, VGS = 0V

ID = 1mA, VDS = 10V

ID = 1A, VGS = 10V

ID = 1A, VGS = 4V

ID = 1A, VGS = 10V

ID = 1A, VDS = 5V

VDS = 10V, VGS = 0V, f = 1MHz

VDD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50

Ω

IS = 1A, VGS = 0V

Channel to case

IS = 2A, dis/dt = –100A/

µs

PERFORMANCE CURVES

200

100

150

POWER DISSIPATION DERATING CURVE

CASE TEMPERATURE TC (

°C)

MAXIMUM SAFE OPERATING AREA

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

10–1

100

101

2101

35 7

102

35 7

103

35 7

tw = 10

TC = 25

°C

Single Pulse

100

10ms

1ms

1.0

2.0

3.0

4.0

5.0

1.0

2.0

3.0

4.0

5.0

PD = 20W

VGS = 10V

Tc = 25

°C

Pulse Test

2.5V

0.4

0.8

1.2

1.6

2.0

0.4

0.8

1.2

1.6

2.0

2.5V

VGS = 10V

Tc = 25

°C

Pulse Test

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