For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

8

8 - 1

MMIC VCO w/ HALF FREQUENCY OUTPUT

& DIVIDE-BY-4, 14.25 - 15.65 GHz

v03.0811

General Description

Features

Functional Diagram

The HMC632LP5(E) is a GaAs InGaP Heterojunc-

tion Bipolar Transistor (HBT) MMIC VCO. The

HMC632LP5(E) integrates resonators, negative resis-

tance devices, varactor diodes and features half-

frequency and divide-by-4 outputs. The VCO’s phase

noise performance is excellent over temperature,

shock, and process due to the oscillator’s monolithic

structure. Power output is +9 dBm typical from a +5V

supply voltage. The prescaler and RF/2 functions can

be disabled to conserve current if not required. The

voltage controlled oscillator is packaged in a leadless

QFN 5x5 mm surface mount package, and requires no

external matching components.

Dual Output: Fo = 14.25 - 15.65 GHz

Fo/2 = 7.125 - 7.825 GHz

Pout: +9 dBm

Phase Noise: -107 dBc/Hz @100 kHz Typ.

No External Resonator Needed

32 Lead 5x5mm SMT Package: 25mm²

Typical Applications

The HMC632LP5(E) is ideal for:

• Point to Point/Multipoint Radio

• Test Equipment & Industrial Controls

• SATCOM

• Military End-Use

Parameter

Min.

Typ.

Max.

Units

Frequency Range

Fo

Fo/2

14.25 - 15.65

7.125 - 7.825

GHz

GHz

Power Output

RFOUT

RFOUT/2

RFOUT/4

4

7

-8

12

13

-2

dBm

dBm

dBm

SSB Phase Noise @ 100 kHz Offset,

Vtune= +5V @ RFOUT

-107

dBc/Hz

Tune Voltage

Vtune

2

13

V

Supply Current

Icc(Dig) + Icc(Amp) + Icc(RF)

280

350

400

mA

Tune Port Leakage Current (Vtune= 13V)

10

µA

Output Return Loss

2

dB

Harmonics/Subharmonics

1/2

2nd

25

25

dBc

dBc

Pulling (into a 2.0:1 VSWR)

10

MHz pp

Pushing @ Vtune= 5V

35

MHz/V

Frequency Drift Rate

1.0

MHz/°C