2SK1931 datasheet(2/9 Pages) SHINDENGEN

Part #	2SK1931

Description	VR Series Power MOSFET(200V 5A)

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]

Direct Link	http://www.shindengen.co.jp/

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2 / 9 page

2SK1931 ( F5E20 )

VR Series Power MOSFET

●Electrical Characteristics Tc = 25℃

Item

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

V(BR)DSS ID = 1mA, VGS = 0V

200

Zero Gate Voltage Drain Current

IDSS

VDS = 200V, VGS = 0V

250

μA

Gate-Source Leakage Current

IGSS

VGS = ±30V, VDS = 0V

±0.1

Forward Tranｓconductance

gfs

ID = 2.5A, VDS = 10V

0.9

1.8

Static Drain-Source On-ｓtate Resistance

RDS(ON) ID = 2.5A, VGS = 10V

0.45

0.65

Gate Threshold Voltage

VTH

ID = 1mA, VDS = 10V

234

Source-Drain Diode Forward Voltage

VSD

IS = 2.5A, VGS = 0V

1.5

Thermal Resistance

θjc

junction to case

6.25 ℃/Ｗ

Total Gate Charge

VGS = 10V, ID = 5A, VDD = 150V

Input Capacitance

Ciss

360

Reverse Transfer Capacitance

Crss

VDS = 10V, VGS = 0V, f = 1MHZ

Output Capacitance

Coss

190

Turn-On Time

ton

ID = 2.5A, VGS = 10V, RL = 40Ω

110ns

Turn-Off Time

toff

150

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