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718LP4E Datasheet(PDF) 6 Page - Hittite Microwave Corporation

Part # 718LP4E
Description  GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
PDF  10 Pages
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Manufacturer  HITTITE [Hittite Microwave Corporation]
Direct Link  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

718LP4E Datasheet(HTML) 6 Page - Hittite Microwave Corporation

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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7
7 - 6
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
5.5 V
rf input power (rfiN)
(Vdd = +5 Vdc)
-5 dBm
Channel Temperature
175 °C
Continuous pdiss (T= 85 °C)
(derate 20 mw/°C above 85 °C)
1.8 w
Thermal resistance
(channel to ground paddle)
50 °C/w
storage Temperature
-65 to +150 °C
operating Temperature
-40 to +85 °C
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Vdd (V)
idd1 (mA)
idd2 (mA)
2.7
22
153
3.0
32
155
3.3
43
157
4.5
77
164
5.0
88
166
5.5
95
169
Note: Amplifier will operate over full voltage ranges shown above.
Typical Supply
Current vs. Vdd (Rbias = 3.92k)
Vdd (V)
rbias Ω
idd1 (mA)
idd2 (mA)
min
max
recommended
3V
1K [1]
open Circuit
2.7k
27
155
3.9k
32
155
10k
41
155
5V
0
open Circuit
820
67
166
3.92k
88
166
10k
92
166
[1] operation with Vdd= 3V and rbias < 1K ohm may result in the part becoming conditionally stable which is not recommended.
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz



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