Naina Semiconductor

Schottky Barrier Rectifier Diode

Features

•

Fast Switching

•

•

Guard ring protection

•

High surge capacity

•

High efficiency, low power loss

Parameter

Maximum instantaneous forward voltage

Maximum instantaneous reverse current at rated DC voltage

Parameter

Symbol

Repetitive peak reverse voltage

DC blocking voltage

Non-repetitive peak reverse

voltage

Average rectified forward current

Non-repetitive peak surge current

(surge applied at rated load

conditions, halfwave, single phase,

60 Hz

Parameters

Maximum thermal resistance, junction to case

Operating junction temperature range

Storage temperature

Mounting torque (non-lubricated threads)

Approximate allowable weight

emiconductor Ltd.

Schottky Barrier Rectifier Diode

DO-203AB (DO

C, unless otherwise noted)

Test Conditions

Symbol

Maximum instantaneous reverse current at rated DC voltage

C, unless otherwise noted)

Values

Units

45

V

54

V

60

A

600

A

= 25

Symbol

Values

-65 to

-65 to

W

45.6

SD51

203AB (DO-5)

Symbol

Values

Units

0.58

V

0.66

V

0.86

V

50

mA

125

mA

Values

Units

1.0

65 to +150

65 to +150

15

in-lb

45.6

g