2N5038 datasheet(2/3 Pages) ISC

2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5038 2N5039

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

2N5038

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5039

IC=0.2A ;IB=0

2N5038

IC=12A ;IB=1.2A

VCEsat-1

Collector-emitter

saturation voltage

2N5039

IC=10A ;IB=1A

1.0

VCEsat-2

Collector-emitter saturation voltage

IC=20A ;IB=5A

2.5

VBEsat

Base-emitter saturation voltage

IC=20A ;IB=5A

3.3

2N5038

IC=12A ; VCE=5V

VBE

Base-emitter on voltage

2N5039

IC=10A ; VCE=5V

1.8

2N5038

VCE=70V; IB=0

ICEO

Collector cut-off current

2N5039

VCE=55V; IB=0

2N5038

VCE=140V; VBE=-1.5V

VCE=100V; VBE=-1.5V ;TC=150℃

5.0

ICEX

Collector cut-off current

2N5039

VCE=110V; VBE=-1.5V

VCE=85V; VBE=-1.5V TC=150℃

5.0

2N5038

IEBO

Emitter cut-off current

2N5039

VEB=5V; IC=0

hFE-1

DC current gain

IC=2A ; VCE=5V

250

2N5038

IC=12A ; VCE=5V

hFE-2

DC current gain

2N5039

IC=10A ; VCE=5V

100

Is/b

Second breakdown collector current

VCE=28V,

VCE=45V(t=1.0s Nonrepetitive)

0.9

Switching times

Rise time

0.5

μs

Storage time

1.5

μs

Fall time

For 2N5038

IC=12A ;IB1=- IB2=1.2A ;VCC=30V

For 2N5039

IC=10A ;IB1=- IB2=1A ;Vcc=30V

0.5

μs

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