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10ETS08FP Datasheet(PDF) 2 Page - Vishay Siliconix |
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10ETS08FP Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page ![]() www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94335 2 Revision: 23-Apr-08 10ETS..FPPbF High Voltage Series Vishay High Power Products Input Rectifier Diode TO-220 FULL-PAK, 10 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop VFM 10 A, TJ = 25 °C 1.1 V Forward slope resistance rt TJ = 150 °C 20 m Ω Threshold voltage VF(TO) 0.82 V Maximum reverse leakage current IRM TJ = 25 °C VR = Rated VRRM 0.05 mA TJ = 150 °C 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C Maximum thermal resistance, junction to case RthJC DC operation 2.5 °C/W Maximum thermal resistance, junction to ambient RthJA 62 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.5 Approximate weight 2g 0.07 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in) maximum 12 (10) Marking device Case style TO-220 FULL-PAK (94/V0) 10ETS12FP |
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