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2N6216 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6216 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6216 2N6217 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6216 150 VCEO(SUS) Collector-emitter sustaining voltage 2N6217 IC=0.1A ;IB=0 140 V VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.75A 1.6 V VBEsat Base-emitter saturation voltage IC=6A; IB=0.75A 2.0 V 2N6216 VCE=80V; IB=0 ICEO Collector cut-off current 2N6217 VCE=70V; IB=0 5.0 mA ICBO Collector cut-off current VCB=RatedVCBO; IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=5V 20 80 fT Transition frequency IC=1A ; VCE=10V 20 MHz |
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