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2N6251 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N6251
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6251 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6251 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6251 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
2N6251
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA ; IB= 0
350
V
VCER
Collector-Emitter Sustaining Voltage
IC= 200mA ; RBE= 50Ω
375
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1.67A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A; IB= 1.67A
2.25
V
ICEV
Collector Cutoff Current
VCE= Rated VCEV; VBE= -1.5V
VCE= Rated VCEV; VBE= -1.5V;TC=125℃
5.0
10
mA
ICEO
Collector Cutoff Current
VCE= 300V; IB= 0
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1.0
mA
hFE
DC Current Gain
IC= 10A ; VCE= 3V
6
50
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 30V,t= 1.0s,Nonrepetitive
5.8
A
fT
Current Gain-Bandwidth Product
IC= 1A ; VCE= 10V; ftest= 1.0MHz
2.5
MHz
Switching Times
tr
Rise Time
2.0
μs
tstg
Storage Time
3.5
μs
tf
Fall Time
IC= 10A , VCC= 200V, IB1= -IB2= 1.67A
1.0
μs



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