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2N6371 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6371 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6371 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 40 V VCEsat-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=4A 4.0 V VBE Base-emitter on voltage IC=16A ; VCE=4V 4.0 V ICEO Collector cut-off current VCE=25V; IB=0 1.5 mA ICEX Collector cut-off current VCE=45V;VBE(off)=1.5V VCE=40V;VBE(off)=1.5V;TC=150℃ 2.0 10.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 mA hFE-1 DC current gain IC=8A ; VCE=4V 15 60 hFE-2 DC current gain IC=16A ; VCE=4V 4 fT Transition freuqency IC=1A ; VCE=4V 0.8 MHz |
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