2N6388 datasheet(1/3 Pages) ISC

Part #	2N6388

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6386 2N6387 2N6388

DESCRIPTION

・With TO-220C package

・Complement to type 2N6666/6667/6668

・DARLINGTON

・High DC current gain

・Low collector saturation voltage

APPLICATIONS

・Designed for general-purpose amplifier

and low speed switching applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6386

40

2N6387

60

VCBO

Collector-base voltage

2N6388

Open emitter

80

V

2N6386

40

2N6387

60

VCEO

Collector-emitter voltage

2N6388

Open base

80

V

VEBO

Emitter-base voltage

Open collector

5

V

2N6386

8

IC

Collector current-DC

2N6387/6388

10

A

ICM

Collector current-Pulse

15

A

IB

Base current-DC

0.25

A

PC

Collector power dissipation

TC=25℃

65

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

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2N6388 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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