20UT04FN datasheet(4/9 Pages) VISHAY

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Document Number: 94573

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 04-Jan-11

VS-20UT04, VS-20WT04FN

Vishay Semiconductors

High Performance Schottky

Generation 5.0, 20 A

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 6 - Forward Power Loss Characteristics

Fig. 7 - Maximum Non-Repetitive Surge Current

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);

PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

IF(AV) - Average Forward Current (A)

525

160

180

120

140

150

170

130

94573_05

Square wave (D = 0.50)

80 % rated V

R applied

See note (1)

IF(AV) - Average Forward Current (A)

94573_06

180°

120°

90°

60°

30°

RMS limit

100

tp - Square Wave Pulse Duration (µs)

94573_07

1000

10 000

1000

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