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2N6688 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6688 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6688 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 200 V VCEsat Collector-emitter saturation voltage IC=20A; IB=2A 1.5 V VBEsat Base-emitter saturation voltage IC=20A; IB=2A 1.8 V ICEV Collector cut-off current VCE=300V; VBE=-1.5V 50 μA IEBO Emitter cut-off current VEB=8V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=2V 25 hFE-2 DC current gain IC=10A ; VCE=2V 20 80 hFE-3 DC current gain IC=20A ; VCE=2V 15 fT Transition frequency IC=1A ; VCE=10V 20 100 MHz |
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