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2SB655 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SB655
Description  isc Silicon PNP Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB655 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
2SB655
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·High Power Dissipation-
: PC= 100W(Max)@TC=25℃
·Complement to Type 2SD675
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-20
A
PC
Collector Power Dissipation
@TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn


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