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2SB755 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB755 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB755 DESCRIPTION ・ ・With MT-200 package ・Complement to type 2SD845 ・High transition frequency ・High breakdown voltage :VCEO=-150V(min) APPLICATIONS ・For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IB Base current -1.2 A PC Collectorl power dissipation TC=25℃ 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (MT-200) and symbol |
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