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2SB762 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB762 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB762 2SB762A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB762 -60 VCEO Collector-emitter breakdown voltage 2SB762A IC=-30mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-4A;IB=-0.4 A -1.5 V VBE Base-emitter on voltage IC=-3A ; VCE=-4V -2.0 V 2SB762 VCE=-60V; VBE=0 ICES Collector cut-off current 2SB762A VCE=-80V; VBE=0 -400 μA 2SB762 VCE=-30V; IB=0 ICEO Collector cut-off current 2SB762A VCE=-60V; IB=0 -700 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -7 mA hFE-1 DC current gain IC=-1A ; VCE=-4V 40 250 hFE-2 DC current gain IC=-3A ; VCE=-4V 15 Switching times ton Turn-on time 0.3 μs toff Turn-off time IC=-4A ; IB1=-IB2=-0.4 A 1.3 μs hFE-1 classifications R Q P 40-90 70-150 120-250 |
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