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2SB795 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB795 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB794 2SB795 DESCRIPTION ・With TO-126 package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SD985 2SD986 APPLICATIONS ・For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB794 -60 VCBO Collector-base voltage 2SB795 Open emitter -80 V 2SB794 -60 VCEO Collector-emitter voltage 2SB795 Open base -80 V VEBO Emitter-base voltage Open collector -8 V IC Collector current (DC) -1.5 A ICM Collector current-peak -3.0 A Ta=25℃ 1.0 PD Total power dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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