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2SB834 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB834 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB834 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR) CEO Collector-emitter breakdown voltage IC=-50mA ; IB=0 -60 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-5V -0.7 -1.0 V VCEsat Collector-emitter saturation voltage IC=-3A;IB=-0.3A -0.5 -1.0 V ICBO Collector cut-off current VCB=-60V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 60 200 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 Cob Collector output capacitance IE=0; VCB=-10V; f=1MHz 150 pF fT Transition frequency IC=-0.5A ; VCE=-5V 9 MHz Switching times ton Turn-on time 0.4 μs ts Storage time 1.7 μs tf Fall time VCC=-30V; RL=15Ω IB1=-IB2=-0.2A 0.5 μs hFE-1 classifications O Y 60-120 100-200 |
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