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2SB1034 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1034 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1034 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-1mA -2.0 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-8V; IC=0 -4 mA hFE DC current gain IC=-1A ; VCE=-2V 2000 COB Output capacitance IE=0; VCB=-10V;f=1MHz 30 pF fT Transition frequency IC=-0.5A ; VCE=-2V 50 MHz Switching times ton Turn-on time 0.4 μs ts Storage time 2.0 μs tf Fall time RL=30Ω IB1=IB2=1mA VCC=-30V 0.4 μs |
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